Patent · US Active

Electrostatic sensor device and matrix

US8378689B2 · kind B2 · utility

0Cited by
20References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 14, 2010
Grant dateFeb 19, 2013
Priority date
Expiry dateNov 21, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R29/12
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An electrostatic sensor device including a first sensor element and a second sensor element; a dielectric substrate material formed in two layers, and a sensing hole which penetrates the dielectric substrate material from its upper surface to its lower surface. The first sensor element is receivable in the sensing hole; and second sensor element includes a first conducting ring disposed on an upper surface of said dielectric substrate and surrounding said sensing hole. The second conducting ring is disposed on a lower surface of the dielectric substrate and surrounds the sensing hole. The first sensor element and the second sensor are capable of producing a variable response when the first sensor element is disposed in the sensing hole.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.