Patent · US Active

System and method for depositing a material on a substrate

US8382901B2 · kind B2 · utility

0Cited by
18References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 3, 2011
Grant dateFeb 26, 2013
Priority date
Expiry dateJun 3, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T137/0318
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing no unvaporized material is provided. The mixture of vapor and carrier gas are remixed to achieve a uniform vapor/carrier gas composition, which is directed toward a surface of a substrate, such as a glass substrate, where the vapor is deposited as a uniform film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.