System and method for depositing a material on a substrate
US8382901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jun 3, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/0318
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for depositing a film on a substrate includes introducing a material and a carrier gas into a heated chamber. The material may be a semiconductor material, such as a cadmium chalcogenide. A resulting mixture of vapor and carrier gas containing no unvaporized material is provided. The mixture of vapor and carrier gas are remixed to achieve a uniform vapor/carrier gas composition, which is directed toward a surface of a substrate, such as a glass substrate, where the vapor is deposited as a uniform film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.