Method of fabricating organic light emitting device
US8383208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2006 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Sep 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.