Selective imaging through dual photoresist layers
US8383323B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 13, 2006 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Nov 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for selective imaging through dual photoresist layers. The system and method includes coating a surface of the wafer with a first resist and baking the wafer to sufficiently drive out solvents in the first resist. The first resist is exposed to a first radiation source and exposing an edge of the wafer having the first resist disposed thereon to the first radiation source. The method further includes hard baking the first resist to the wafer and coating the first resist with a second resist. The method also includes baking the wafer to sufficiently drive out solvents in the second resist and exposing the second resist to a second radiation source. The method also includes exposing select portions of the edge of the wafer having the second resist disposed thereon to the second radiation source and hard baking the second resist to the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.