Method for the production of thin layer of silicon by utilization of mismatch in coefficient of thermal expansion between screen printed metal layer and silicon mother substrate
US8383492B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 31, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Aug 31, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for producing a thin substrate with a thickness below 750 microns, comprising providing a mother substrate, the mother substrate having a first main surface and a toughness; inducing a stress with predetermined stress profile in at least a portion of the mother substrate, said portion comprising the thin substrate, the induced stress being locally larger than the toughness of the mother substrate at a first depth under the main surface; such that the thin substrate is released from the mother substrate, wherein the toughness of the mother substrate at the first depth is not lowered prior to inducing the stress. The method can be used in the production of, for example, solar cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.