Method for formation of tips
US8383498B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2008 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Nov 28, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method (80) for manufacturing a semiconductor tip. The method comprises obtaining (81) a substrate provided with a layer of tip material, providing (82) a doping profile in the layer of tip material, the doping profile comprising a tapered-shaped region of a first dopant concentration, undoped or lightly doped, e.g. having a dopant concentration of 1017 cm−3 or lower, surrounded by a region of a second dopant concentration, highly doped, e.g. having a dopant concentration above 1017 cm−3, the first dopant concentration being lower than the second dopant concentration, and isotropically etching (83) the layer of tip material by using an etch chemistry for which the etch rate of tip material with the second dopant concentration is substantially higher than the etch rate of the tip material with the first dopant concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.