Method of etching organosiloxane dielectric material and semiconductor device thereof

US8383520B2 · kind B2 · utility

Assignee

• ARIZONA BOARD OF REGENTS, A BODY CORPORATE OF THE STATE OF ARIZONA ACTING FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY · US

Inventor

• Michael Marrs · Phoenix, US

Key dates

• Filing date: May 27, 2011
• Grant date: Feb 26, 2013
• Expiry date: May 27, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02126
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In some embodiments, a method of etching an organosiloxane dielectric material can include: (a) providing the organosiloxane dielectric material; (b) providing a patterned mask over the organosiloxane dielectric material; and (c) reactive ion etching the organosiloxane dielectric material. Other embodiments are disclosed in this application.