Stacked photovoltaic device and method of manufacturing the same
US8383927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Nov 18, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.