Semiconductor structure having blocks connected by nanowires
US8384069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Dec 21, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24331
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a support and at least one block provided on the support. The block includes a stack including alternating layers based on a first semiconductor material and layers based on a second semiconductor material different from the first material, the layers presenting greater dimensions than layers such that the stack has a lateral tooth profile and a plurality of spacers filling the spaces formed by the tooth profile, the spacers being made of a third material different from the first material such that each of the lateral faces of the block presents alternating lateral bands based on the first material and alternating lateral bands based on the third material. At least one of the lateral faces of the block is partially coated with a material promoting the growth of nanotubes or nanowires, the catalyst material exclusively coating the lateral bands based on the first material or exclusively coating the lateral bands based on the third material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.