Thin film transistor, display device, and electronic device
US8384080B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Apr 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6756
Abstract
A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.