Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same
US8384087B2 · kind B2 · utility
1Cited by
1References
17Claims
0Family size
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Key dates
| Filing date | Aug 27, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Aug 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.