Method for forming sapphire substrate and semiconductor device
US8384111B2 · kind B2 · utility
6Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Feb 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device fabricated by growing a compound semiconductor layer on a sapphire substrate, a sapphire substrate enabling the semiconductor device to have a high light-extraction efficiency is provided.A plurality of projections 2, 2, . . . are provided at random on a surface of a sapphire substrate 1, and a GaN layer 10 is grown on this surface. Then, a multi-quantum well layer 12, a p-AlGaN layer 14, a p-GaN layer 16, and an ITO layer 18 are formed on the GaN layer 10, and two electrodes 21 and 22 are also formed. In this manner, a semiconductor light-emitting device is fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.