Complementary metal oxide semiconductor devices

US8384156B2 · kind B2 · utility

Assignee

• Yale University · US

Inventors

• Tso-Ping Ma · Branford, US
• Minjoo Lee · Urbana, US
• Xiao-Dong Sun · Qingdao, CN

Key dates

• Filing date: Jun 15, 2009
• Grant date: Feb 26, 2013
• Expiry date: Jun 15, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

Improvements in Complementary Metal Oxide Semiconductor (CMOS) devices; in particular, field effect transistors (FETs) and devices using said transistors which are able to take advantage of the higher carrier mobility of electrons compared to holes by replacing the conventional p-channel transistor with an n-channel transistor having a double gate (or vice versa): Such a. Unipolar CMOS (U-CMOS) transistor can be realized by adapting the source and/or the drain such that when the body region undergoes inversion at a first surface current, is able to flow between the drain and the source and when the body region undergoes inversion at a second surface current is not able to flow between the drain and the source. Various logic gates may be constructed using U-CMOS transistors.