Pressure sensor

US8384170B2 · kind B2 · utility

Assignee

• ENDRESS+HAUSER GMBH+CO.KG · DE

Inventors

• Igor Getman · Lörrach, DE
• Anh Tuan Tham · Berlin, DE
• Dieter Stolze · Potsdam, DE

Key dates

• Filing date: Mar 4, 2008
• Grant date: Feb 26, 2013
• Expiry date: Jun 12, 2029

Classification

• Technology area (CPC G): Physics
• CPC primary: G01L9/0042
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A piezoresistive pressure sensor is especially suitable for measuring smaller pressures and has a small linearity error. The pressure sensor is manufactured from a BESOI wafer having first and second silicon layers and an oxide layer arranged therebetween. The pressure sensor includes, formed from the first silicon layer of the BESOI wafer, an active layer, in which piezoresistive elements are doped, and, formed from the second silicon layer of the BESOI wafer, a membrane carrier, which externally surrounds a cavity in the second silicon layer, via which a membrane forming region of the active layer and an oxide layer associated therewith are exposed, wherein, in an outer edge of the region of the oxide layer exposed by the cavity, a groove is provided surrounding the region.