Patent · US Active

Writable magnetic element

US8384171B2 · kind B2 · utility

4Cited by
21References
33Claims
0Family size

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Key dates

Filing dateDec 3, 2010
Grant dateFeb 26, 2013
Priority date
Expiry dateMay 19, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01F10/3254
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle α lying in the range 90°±60°, in particular 90°±30°, and more particularly 90°±15° relative to said magnetization direction in order to generate an effective magnetic field in the central layer, the current being applied either in a first direction or in a second direction opposite to the first, in order to orient the magnetization direction in …

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.