Black silicon based metal-semiconductor-metal photodetector

US8384179B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Yadong Jiang · Sichuan, CN
• Jing Jiang · Beijing, CN
• Anyuan Zhang · Nanjing, CN
• Zhengyu Guo · Milpitas, US
• Guodong Zhao · Tangxia, CN
• Zhiming Wu · Nanhu, CN
• Wei Li · Shanghai, CN

Key dates

• Filing date: Jul 13, 2010
• Grant date: Feb 26, 2013
• Expiry date: Oct 20, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A black silicon based metal-semiconductor-metal photodetector includes a silicon substrate and a black silicon layer formed on the silicon substrate. An interdigitated electrode pattern structure is formed on the black silicon layer, which can be a planar or U-shaped structure. A thin potential barrier layer is deposited at the interdigitated electrode pattern structure. An Al or transparent conductive ITO thin film is deposited on the thin potential barrier layer. A passivation layer is provided on the black silicon layer. In the black silicon based metal-semiconductor-metal photodetector, the black silicon layer, as a light-sensitive area, can respond to ultraviolet, visible and near infrared light.