Matrix-type cold-cathode electron source device
US8384281B2 · kind B2 · utility
4Cited by
9References
5Claims
0Family size
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Key dates
| Filing date | Apr 27, 2009 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jul 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/4608
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.