Semiconductor optical modulation device, Mach-Zehnder interferometer type semiconductor optical modulator, and method for producing semiconductor optical modulation device
US8384980B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 21, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jul 28, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical modulation device includes a substrate; a first semiconductor cladding layer of a first conductivity type disposed on the substrate; an optical waveguide layer disposed on the first semiconductor cladding layer, the optical waveguide layer including a first semiconductor optical confinement layer, a second semiconductor optical confinement layer, and an insulating layer disposed between the first semiconductor optical confinement layer and the second semiconductor optical confinement layer, the insulating layer being made of aluminum oxide; a second semiconductor cladding layer of a second conductivity type disposed on the optical waveguide layer; a first electrode electrically connected to the first semiconductor cladding layer; and a second electrode electrically connected to the second semiconductor cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.