Integrated power passives
US8385047B2 · kind B2 · utility
3Cited by
10References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2007 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Oct 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.