Optical semiconductor device and pumping light source for optical fiber amplifier
US8385379B2 · kind B2 · utility
1Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Nov 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device of the invention is formed so that n-type InP current blocking layers enter the inside of p-type InP cladding layers, i.e., the n-type current blocking layers ride over the upper part of the p-type InP cladding layers, so that a distance between the n-type InP current block layers composing a current blocking region is narrower than a width of the p-type cladding layers contacting with the n-type InP current blocking layers. Thereby, the semiconductor device whose leak current in the current blocking region may be reduced which permits high-output and high-temperature operations may be readily fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.