Patent · US Active

Methods of writing partial page data in a non-volatile memory device

US8386696B2 · kind B2 · utility

3Cited by
0References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 13, 2008
Grant dateFeb 26, 2013
Priority date
Expiry dateApr 27, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F2212/7202
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method of writing partial page data in a non-volatile memory device includes, reading data from a second block when the size of a last page of data to be written in a page of a first block is smaller than a size of the page of the first block, wherein a size of the read data is given by the size of the page of the first block minus the size of the last page of data; storing together data of the last page and the data read from the second block in a buffer; and writing the data stored in the buffer in the first block.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.