Memory cell formed using a recess and methods for forming the same
US8389375B2 · kind B2 · utility
5Cited by
48References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Nov 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a first aspect, a method of forming a memory cell is provided, the method including: (1) forming a pillar above a substrate, the pillar comprising a steering element and a metal hardmask layer; (2) selectively removing the metal hardmask layer to create a void; and (3) forming a carbon-based switching material within the void. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.