Semiconductor device and method for manufacturing the same

US8389404B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International Corp. · CN

Inventors

• Minwei Xi · Shanghai, CN
• Hong Zhu · Shanghai, CN

Key dates

• Filing date: Oct 27, 2011
• Grant date: Mar 5, 2013
• Expiry date: Nov 11, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/15788
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a first substrate and a second substrate being bonded to each other, a posterior interconnect layer interposed between the first and second substrates, a weld pad disposed in the posterior interconnect layer, and a first annular opening disposed in the first substrate. The device further includes a dielectric layer formed in the first opening, a via surrounded by the first annular opening, and an interconnect layer disposed in the via. The device also includes a conductive bump disposed on the interconnect layer and electrically connected to the weld pad through the interconnect layer.