Bonding wire for semiconductor devices
US8389860B2 · kind B2 · utility
15Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2008 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Sep 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of <100> orientations in crystalline orientations <hkl> in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the <100> orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.