Image sensor having array of pixels and metal reflectors with widths scaled based on distance from center of the array

US8389921B2 · kind B2 · utility

Assignee

• OmniVision Technologies, Inc. · US

Inventors

• Hidetoshi Nozaki · Yokohama, JP
• Fei Wu · Beijing, CN

Key dates

• Filing date: Apr 30, 2010
• Grant date: Mar 5, 2013
• Expiry date: May 7, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8063

Abstract

An image sensor in accordance with embodiments disclosed herein includes an array of imaging pixels, an insulator layer, and a plurality of metal reflectors. The array of imaging pixels are disposed within a semiconductor layer, where each imaging pixel in the array of imaging pixels includes a photosensitive element configured to receive light from a backside of the image sensor. The insulator layer is disposed on a frontside of the semiconductor layer and the plurality of metal reflectors are disposed within the insulator layer to reflect the light to a respective photosensitive element. A width of each of the plurality of metal reflectors is equal to a width of a metal reflector at the center of the array multiplied by a scaling factor, where the scaling factor is dependent on a distance of the metal reflector from the center of the array.