Non-volatile semiconductor memory device including memory cells with a variable resistor
US8391048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2010 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Jun 2, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device according to an aspect of embodiments of the present invention includes a memory cell array including: multiple first wirings; multiple second wirings crossing the multiple first wirings; and multiple electrically rewritable memory cells respectively arranged at intersections of the first wirings and the second wirings, and each formed of a variable resistor which stores a resistance value as data in a non-volatile manner. The non-volatile semiconductor memory device according to an aspect of the embodiments of the present invention further includes a controller for selecting a given one of the memory cells, generating an erase pulse which is used for erasing data, and supplying the erase pulse to the selected memory cell. The erase pulse has a pulse width which is increased or decreased exponentially in accordance with an access path length to the selected memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.