Resistance change element, semiconductor memory device, manufacturing method and driving method thereof
US8391050B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Mar 18, 2009 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Nov 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
Abstract
To provide a resistance change element which can reduce the current required to switch the state to the high resistance state from the low resistance state. The resistance change element according to the exemplary embodiment includes three or more electrodes, none of the electrodes supplying ion to a resistance change material (205). It includes a material (206) which does not show resistance change arranged between an electrode (207) and the resistance change material (205), and current pathways formed at two electrodes (204) other than the electrode (207).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.