Nonvolatile memory
US8391067B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 23, 2009 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Jul 30, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory includes a memory cell array including a plurality of memory cells, each of the memory cells capable of storing electric charges nonvolatilly, a first sense amplifier for comparing a voltage produced by one of the selected memory cells to be read out with a first threshold value for distinguishing between a write state and an erase state of the selected memory cell, a second sense amplifier for comparing the voltage produced by one of the selected memory cell with a second threshold value having a greater voltage than the first threshold voltage, and a write unit for rewriting data of the selected memory cell when the first and the second sense amplifiers produce different sense outputs from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.