Transferring pattern onto semiconductor substrate using optimum transfer condition determined for each divided area
US8392855B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2011 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Mar 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to one embodiment, a pattern forming method comprises transferring a pattern formed in a surface of a template to a plurality of chip areas in a semiconductor substrate under different transfer conditions. Furthermore, the transferring the pattern formed in the surface of the template to the plurality of chip areas in the semiconductor substrate under the different transfer conditions comprises transferring the pattern formed in the surface of the template to the semiconductor substrate at least twice under each identical transfer condition. Moreover, the pattern forming method comprises dividing each of the plurality of chip areas into a plurality of areas, determining an optimum condition for each set of corresponding divided areas in the plurality of chip areas, and transferring the pattern onto the semiconductor substrate using the optimum transfer condition determined for each divided area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.