Substrate processing method, and method of manufacturing semiconductor device
US8393091B2 · kind B2 · utility
508Cited by
10References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 31, 2011 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Mar 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a substrate processing apparatus including a processing chamber housing a substrate, pipes for supplying gas into the processing chamber, and heaters provided in the middle of the pipes, and heating the gas. In the substrate processing apparatus, the heaters heat the gas to a temperature lower than a temperature at which exhaust gas is generated from the pipes to dry the substrate in the heated gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.