Patent · US Active

Electrical device fabrication from nanotube formations

US8394664B2 · kind B2 · utility

6Cited by
8References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 2, 2007
Grant dateMar 12, 2013
Priority date
Expiry dateJul 18, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K85/221
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.