Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film
US8394668B2 · kind B2 · utility
2Cited by
10References
28Claims
0Family size
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Key dates
| Filing date | Mar 28, 2011 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Mar 31, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
Abstract
Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.