Method of manufacturing semiconductor device having optical devices
US8394705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2010 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Oct 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a first region, such that a first semiconductor layer is defined on the first buried oxide layer. An active portion is defined by forming a trench in the semiconductor substrate in a second region. A capping semiconductor pattern is formed on a top surface and an upper portion of a sidewall of the active portion. An oxide layer is formed by oxidizing the capping semiconductor pattern and an exposed lower portion of the sidewall of the active portion, such that the oxide layer surrounds a non-oxidized portion of the active portion. The non-oxidized portion of the active portion is a core and one end of the core is connected to a first optical device formed at the first semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.