Optical semiconductor device with quantum dots having configurational anisotropy
US8395106B2 · kind B2 · utility
2Cited by
2References
16Claims
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Key dates
| Filing date | Aug 4, 2009 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Jul 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.