Thin film transistor substrate and method of manufacturing the same
US8395154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2010 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Nov 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a portion of a gate signal line and a portion of a common signal line, cutouts which are arranged perpendicular to the extending direction of these lines and open to face each other in an opposed manner are formed. A cruciform shape in appearance is formed by combining a gap defined between the gate signal line and the common signal line extending parallel to each other and the cutouts to each other. The cruciform portion formed in this manner is used as an alignment mark in the exposure of a photolithography step of a layer formed later. Due to such a constitution, in manufacturing a thin film transistor substrate, it is possible to realize the highly accurate alignment without forming a pattern only used for alignment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.