Semiconductor light-emitting element, method of manufacturing same, and light-emitting device
US8395173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2009 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Mar 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8515
Abstract
A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24. In the semiconductor light-emitting element 1, the N-polar plane of the n-type GaN film 22 has a fine peak-valley structure 22c outside a portion joined to the cathode 4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.