Fast recovery diode

US8395244B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Jan Vobecky · Lenzburg, CH
• Kati Hemmann · Bremgarten, CH
• Hamit Duran · Turgi, CH
• Munaf Rahimo · Uezwil, CH

Key dates

• Filing date: Nov 9, 2010
• Grant date: Mar 12, 2013
• Expiry date: Jul 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60

Abstract

A fast recovery diode includes an n-doped base layer having a cathode side and an anode side opposite the cathode side. A p-doped anode layer is arranged on the anode side. The anode layer has a doping profile and includes at least two sublayers. A first one of the sublayers has a first maximum doping concentration, which is between 2*1016 cm−3 and 2*1017 cm−3 and which is higher than the maximum doping concentration of any other sublayer. A last one of the sublayers has a last sublayer depth, which is larger than any other sublayer depth. The last sublayer depth is between 90 to 120 μm. The doping profile of the anode layer declines such that a doping concentration in a range of 5*1014 cm−3 and 1*1015 cm−3 is reached between a first depth, which is at least 20 μm, and a second depth, which is at maximum 50 μm. Such a profile of the doping concentration is achieved by using aluminum diffused layers as the at least two sublayers.