Patent · US Active

Semiconductor device

US8395261B2 · kind B2 · utility

4Cited by

3References

13Claims

0Family size

Assignee

RENESAS ELECTRONICS CORPORATION · JP

Inventors

Takekazu Tanaka · Yokohama, JP
Kouhei Takahashi · Osaka, JP
Seiji Okabe · Tokyo, JP

Key dates

Filing date	Jun 22, 2012
Grant date	Mar 12, 2013
Priority date	—
Expiry date	Jun 22, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/20755
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.