Planar, monolithically integrated coil
US8395472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2009 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Sep 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F2017/008
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a means to integrate planar coils on silicon, while providing a high inductance. This high inductance is achieved through a special back- and front sided shielding of a material. In many applications, high-value inductors are a necessity. In particular, this holds for applications in power management. In these applications, the inductors are at least 5 of the order of 1 μH, and must have an equivalent series resistance of less than 0.1Ω. For this reason, those inductors are always bulky components, of a typical size of 2×2×1 mm 3, which make a fully integrated solution impossible. On the other hand, integrated inductors, which can monolithically be integrated, do exist. However, these inductors suffer either from low inductance values, or 10 very-high DC resistance values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.