Deposition system for thin film formation
US8398770B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Dec 12, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB33Y80/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.