Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition
US8398872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2009 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Oct 6, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A novel method of forming large atomically flat areas is described in which a crystalline substrate having a stepped surface is exposed to a vapor of another material to deposit a material onto the substrate, which material under appropriate conditions self arranges to form 3D islands across the substrate surface. These islands are atomically flat at their top surface, and conform to the stepped surface of the substrate below at the island-substrate interface. Thereafter, the deposited materials are etched away, in the etch process the atomically flat surface areas of the islands transferred to the underlying substrate. Thereafter the substrate may be cleaned and annealed to remove any remaining unwanted contaminants, and eliminate any residual defects that may have remained in the substrate surface as a result of pre-existing imperfections of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.