Method of manufacturing semiconductor device
US8399357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2011 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Oct 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is disclosed. The method forms a semiconductor device including a workpiece structure having a first region and second region located adjacent to the first region formed therein. The first region includes a first pattern and the second region includes a second pattern having at least a greater pattern width or a smaller aspect ratio than the first pattern. The method includes forming the first pattern by providing a first film having a first contact angle at a top portion thereof and the second pattern by providing a second film having a second contact angle less than the first contact angle at a top portion thereof; cleaning the first and the second regions by a chemical liquid; rinsing the cleaned first and the second regions by a rinse liquid; and drying the rinsed first and the second regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.