Oxide semiconductor transistors and methods of manufacturing the same
US8399882B2 · kind B2 · utility
38Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Jun 11, 2010 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Mar 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.