Light emitting device
US8399901B2 · kind B2 · utility
0Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2009 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Jan 1, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0362
Abstract
Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a first passivation layer on the light emitting semiconductor layer, and a second passivation layer on the first passivation layer and has an elastic modulus of 2.0 to 4.0 GPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.