AlGaInP-based light-emitting diode with double reflective layers and fabrication method thereof

US8399906B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Chiahao Tsai · Wuhu, CN
• Suhui Lin · Xiamen, CN
• LINGFENG YIN · Xiamen, CN
• Jiansen ZHENG · Xiamen, CN
• Kechuang Lin · Xiamen, CN

Key dates

• Filing date: May 2, 2011
• Grant date: Mar 19, 2013
• Expiry date: Sep 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

The invention discloses an AlGaInP-based LED with double reflective layers and a fabrication method thereof. The method includes: providing a temporary substrate; forming an epitaxial layer on a front of the temporary substrate; forming a distributed Bragg reflector on the epitaxial layer; forming an some openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a portion of a top of the epitaxial layer is exposed; forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer, to fill the openings; bonding a permanent substrate onto the reflective metal layer; removing the temporary substrate; forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and dicing to obtain the AlGaInP-based LED chips. The AlGaInP-based LED with both the distributed Bragg reflector and the reflective metal layer according to the invention can fully utilize good reflectivity of the reflective layers to the extreme, and improve the light-emission efficiency of the AlGaInP-based LED effectively.