Enhancement mode field effect device and the method of production thereof

US8399911B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Joff Derluyn · Vilvoorde, BE
• Steven Boeykens · Olen, BE
• Marianne Germain · Liège, BE
• Gustaaf Borghs · Kessel-Lo, BE

Key dates

• Filing date: Jun 6, 2007
• Grant date: Mar 19, 2013
• Expiry date: Jun 7, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A method is disclosed for producing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET or MESFET devices, comprising two active layers, e.g. a GaN/AlGaN layer. The method produces an enhancement mode device of this type, i.e. a normally-off device, by providing a passivation layer on the AlGaN layer, etching a hole in the passivation layer and not in the layers underlying the passivation layer, and depositing the gate contact in the hole, while the source and drain are deposited directly on the passivation layer. The characteristics of the active layers and/or of the gate are chosen such that no two-dimensional electron gas layer is present underneath the gate, when a zero voltage is applied to the gate. A device with this behavior is also disclosed.