Semiconductor device and manufacturing method of same
US8399926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2011 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Nov 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
Abstract
A FinFET and nanowire transistor with strain direction optimized in accordance with the sideface orientation and carrier polarity and an SMT-introduced manufacturing method for achieving the same are provided. A semiconductor device includes a pMISFET having a semiconductor substrate, a rectangular solid-shaped semiconductor layer formed at upper part of the substrate to have a top surface parallel to a principal plane of the substrate and a sideface with a (100) plane perpendicular to the substrate's principal plane, a channel region formed in the rectangular semiconductor layer, a gate insulating film formed at least on the sideface of the rectangular layer, a gate electrode on the gate insulator film, and source/drain regions formed in the rectangular semiconductor layer to interpose the channel region therebetween. The channel region is applied a compressive strain in the perpendicular direction to the substrate principal plane. A manufacturing method of the device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.