Solid state imaging device
US8399947B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2011 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Sep 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1515
Abstract
A solid-state imaging device includes photoelectric conversion units, vertical transfer units including vertical transfer electrodes, a horizontal transfer unit, a distribution transfer unit including distribution transfer electrodes, and first light-shield layers and second light-shield layers provided on the vertical transfer units and the distribution transfer unit. The first light-shield layers and the second light-shield layers are conductive. The first light-shield layers are provided in a layer different from a layer in which the second light-shield layers are provided. At least one of the first light-shield layers serves as an interconnect electrically connected to the vertical transfer electrodes included in the same row, and at least one of the first light-shield layers on the distribution transfer unit serves as an interconnect electrically connected the distribution transfer electrodes. The first light-shield layers are disposed so as not to overlap with the horizontal transfer unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.