Semiconductor device and method for manufacturing the same
US8399953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2010 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Oct 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/49
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, an element isolation insulating film dividing an upper portion of the substrate into a plurality of first active regions, a source layer and a drain layer, a gate electrode, a gate insulating film, a first punch-through stopper layer, and a second punch-through stopper layer. The source layer and the drain layer are formed in spaced to each other in an upper portion of each of the first active regions. The first punch-through stopper layer is formed in a region of the first active region directly below the source layer and the second punch-through stopper layer is formed in a region of the first active region directly below the drain layer. The first punch-through stopper layer and the second punch-through stopper layer each has an effective impurity concentration higher than the semiconductor substrate. The first punch-through stopper layer and the source layer are separated in the channel region. The second punch-through stopper layer and the drain layer are separated in the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.