Semiconductor integrated circuit device
US8399954B2 · kind B2 · utility
6Cited by
8References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 28, 2007 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Jul 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device according to an embodiment of the invention includes: a protective element formed on a semiconductor substrate; and a plurality of wiring layers composed of insulating layers including a layer that is a low dielectric-constant film, and metal lines, in which a metal line in a second wiring layer and a metal line in a first wiring layer among the plurality of wiring layers extend from the other region above the semiconductor substrate to a region electrically connected with the protective element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.